A 1-GHz operational transconductance amplifier in SOI technology

Author

Eggermont, J.-P. ; Flandre, D. ; Gillon, R. ; Colinge, J.P.

Author_Institution

Microelectron. Lab., Univ. Catholique de Louvain, Belgium

fYear

1995

fDate

3-5 Oct 1995

Firstpage

127

Lastpage

128

Abstract

This work investigates the feasibility of realisation of SOI CMOS Operational Transconductance Amplifiers (OTA) operating up to 1 GHz. In contrast to a previously published microwave wideband amplifier driving low ohmic resistive line termination, OTAs for Switched-Capacitor (SC) applications need a high impedance and capacitive output node. In addition applications such as sigma-delta converters require fast OTAs. In order to reduce the settling time, the transfer function should also include a minimal amount of poles and zeros. Consequently in spite of its low voltage gain, this single-stage OTA could be of interest for high-frequency applications

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; operational amplifiers; poles and zeros; silicon-on-insulator; wideband amplifiers; 1 GHz; CMOS OTA; SC applications; SOI technology; Si; operational transconductance amplifier; poles and zeros; settling time reduction; sigma-delta converter applications; single-stage OTA; switched-capacitor applications; transfer function; wideband amplifier; Broadband amplifiers; CMOS technology; Cutoff frequency; Delta-sigma modulation; Impedance; Laboratories; Microwave technology; Operational amplifiers; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1995. Proceedings., 1995 IEEE International

Conference_Location

Tucson, AZ

Print_ISBN

0-7803-2547-8

Type

conf

DOI

10.1109/SOI.1995.526493

Filename

526493