DocumentCode
3490553
Title
Are NV-memories non-volatile?
Author
Ratchev, Dimitre
Author_Institution
Reliability Lab, Swiss Federal Inst. of Technol., Zurich, Switzerland
fYear
1993
fDate
9-10 Aug 1993
Firstpage
102
Lastpage
106
Abstract
Some results from qualification test procedures on 64 k (4 designs) and 256 k (4 designs) EEPROM as well as 1 M (4 designs) flash memories are presented. Electrical characterization, various environmental tests, and reliability tests on up to about 220 devices per design were performed. Different defect and failed devices were detected and failure analysis (whenever possible) was accomplished. The results indicate enhancements of the quality and reliability of newer NV-memory generations but the levels of other standard memories (DRAM, SRAM) are not reached yet
Keywords
EPROM; circuit reliability; environmental testing; failure analysis; integrated circuit testing; integrated memory circuits; 1 Mbit; 256 kbit; 64 kbit; EEPROM; electrical characterisation; environmental tests; failure analysis; flash memories; nonvolatile memories; qualification test procedures; reliability tests; EPROM; Electrostatic discharge; Failure analysis; Performance evaluation; Personal communication networks; Qualifications; Random access memory; Redundancy; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Testing, 1993., Records of the 1993 IEEE International Workshop on
Conference_Location
San Jose, CA
Print_ISBN
0-8186-4150-9
Type
conf
DOI
10.1109/MT.1993.263141
Filename
263141
Link To Document