DocumentCode :
3490627
Title :
24-GHz 1-V pseudo-stacked mixer with gain-boosting technique
Author :
Shiramizu, Nobuhiro ; Masuda, Toru ; Nakamura, Takahiro ; Washio, Katsuyoshi
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Kokubunji
fYear :
2008
fDate :
15-19 Sept. 2008
Firstpage :
102
Lastpage :
105
Abstract :
Design techniques for a low-power mixer operating in the quasi-millimeter-wave frequency region were developed. A pseudo-stacked configuration and a pre-biasing technique, to reduce supply voltage and dynamic current consumption, respectively, were introduced. Furthermore, a gain-boosting technique, which actively utilizes a parasitic resonant caused by a transformer and parasitic capacitor, improves the power efficiency of the mixer. The proposed mixer fabricated by 0.18-mum SiGe BiCMOS technology achieves a conversion gain of 4.8 dB and NF of 10.4 dB at 1-V power supply. These performance results indicate that these design techniques are suitable for implementing low-power receivers for the quasi-millimeter-wave frequency region.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; integrated circuit design; low-power electronics; microwave integrated circuits; microwave mixers; microwave receivers; BiCMOS technology; SiGe; frequency 24 GHz; gain 4.8 dB; gain-boosting technique; low-power mixer; low-power receivers; noise figure 10.4 dB; parasitic capacitor; quasi-millimeter-wave frequency region; size 0.18 mum; transformer; voltage 1 V; BiCMOS integrated circuits; Frequency; Gain; Germanium silicon alloys; Mixers; Noise measurement; Power capacitors; Power supplies; Resonance; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2008. ESSCIRC 2008. 34th European
Conference_Location :
Edinburgh
ISSN :
1930-8833
Print_ISBN :
978-1-4244-2361-3
Electronic_ISBN :
1930-8833
Type :
conf
DOI :
10.1109/ESSCIRC.2008.4681802
Filename :
4681802
Link To Document :
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