Title :
Modeling and improvement of a metallization system subjected to fast temperature cycle stress
Author :
Smorodin, Tobias ; Bohm, Christina ; Gaspar, Joao ; Schmidt, Marek ; Paul, Oliver ; Stecher, Matthias
Author_Institution :
Infineon Technol. AG, Neubiberg
Abstract :
The device failure of DMOS transistors under repetitive inductive load switching is dominated by the thermomechanical deformation of the metallization. The failure evolution is thus experimentally studied with special test structures and highlighted by thermomechanical FEM-simulation. Based on these findings a novel metallization concept is shown, which improves the fast temperature cycle reliability.
Keywords :
MOS integrated circuits; finite element analysis; integrated circuit reliability; semiconductor device metallisation; transistors; DMOS transistors; fast temperature cycle stress; metallization system; repetitive inductive load switching; temperature cycle reliability; thermomechanical FEM-simulation; thermomechanical deformation; Aluminum; Circuits; Conductors; Metallization; Switches; Temperature; Testing; Thermal stresses; Thermomechanical processes; Voltage;
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, 2008. EuroSimE 2008. International Conference on
Conference_Location :
Freiburg im Breisgau
Print_ISBN :
978-1-4244-2127-5
Electronic_ISBN :
978-1-4244-2128-2
DOI :
10.1109/ESIME.2008.4525081
