Modeling and improvement of a metallization system subjected to fast temperature cycle stress

Author

Smorodin, Tobias ; Bohm, Christina ; Gaspar, Joao ; Schmidt, Marek ; Paul, Oliver ; Stecher, Matthias

Author_Institution

Infineon Technol. AG, Neubiberg

fYear

2008

fDate

20-23 April 2008

Firstpage

1

Lastpage

6

Abstract

The device failure of DMOS transistors under repetitive inductive load switching is dominated by the thermomechanical deformation of the metallization. The failure evolution is thus experimentally studied with special test structures and highlighted by thermomechanical FEM-simulation. Based on these findings a novel metallization concept is shown, which improves the fast temperature cycle reliability.

Keywords

MOS integrated circuits; finite element analysis; integrated circuit reliability; semiconductor device metallisation; transistors; DMOS transistors; fast temperature cycle stress; metallization system; repetitive inductive load switching; temperature cycle reliability; thermomechanical FEM-simulation; thermomechanical deformation; Aluminum; Circuits; Conductors; Metallization; Switches; Temperature; Testing; Thermal stresses; Thermomechanical processes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, 2008. EuroSimE 2008. International Conference on

Conference_Location

Freiburg im Breisgau

Print_ISBN

978-1-4244-2127-5

Electronic_ISBN

978-1-4244-2128-2

Type

conf

DOI

10.1109/ESIME.2008.4525081

Filename

4525081