• DocumentCode
    3490703
  • Title

    Photocurrent measurements of electron traps on ITOX processed SIMOX structures

  • Author

    Lawrence, R.K. ; Ioannou, D.E. ; Stahibush, R.E. ; Hughes, H.L.

  • Author_Institution
    ARACOR, Washington, DC, USA
  • fYear
    1995
  • fDate
    3-5 Oct 1995
  • Firstpage
    148
  • Lastpage
    149
  • Abstract
    Photocurrent measurements have been performed on internal thermal oxide (ITOX) buried oxide (BOX) SIMOX structures. After electron injection, from a 5eV mercury light source, the net electron trapping per area for the ITOX structure was found to be larger than that of a control SIMOX structure. This increase has been attributed to the ITOX´s process influence on the formation of the ITOX/BOX oxide
  • Keywords
    SIMOX; buried layers; electron traps; photoconductivity; BOX; ITOX; SIMOX structures; buried oxide; electron injection; electron traps; internal thermal oxide; photocurrent measurements; Aluminum; Capacitance-voltage characteristics; Electron traps; Laboratories; Light sources; Lighting control; Oxidation; Performance evaluation; Photoconductivity; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1995. Proceedings., 1995 IEEE International
  • Conference_Location
    Tucson, AZ
  • Print_ISBN
    0-7803-2547-8
  • Type

    conf

  • DOI
    10.1109/SOI.1995.526503
  • Filename
    526503