DocumentCode :
3490761
Title :
Improvement of buried oxide quality in low-dose SIMOX wafers by high-temperature oxidation
Author :
Kawamura, K. ; Nakajima, T. ; Hamaguchi, I. ; Yano, T. ; Nagatake, Y. ; Tachimori, M.
Author_Institution :
Electron. Res. Labs., Nippon Steel Corp., Yamaguchi, Japan
fYear :
1995
fDate :
3-5 Oct 1995
Firstpage :
156
Lastpage :
157
Abstract :
For commercial ULSIs using SOI CMOS, low-dose SIMOX wafers are very attractive because of their excellent crystalline quality and low cost compared with high-dose SIMOX wafers. However, it has been reported that the buried-oxide (BOX) of the low-dose SIMOX wafer has a couple of problems to be solved. One problem is the presence of “pipe” leakage caused by particles shadowing the oxygen ion beam during the implantation. Another problem is the breakdown electric field being lower than that of the thermal oxide. In this paper, it is shown that high-temperature oxidation, which increases the BOX thickness, effectively solves the above problems
Keywords :
SIMOX; buried layers; electric breakdown; high-temperature effects; ion implantation; oxidation; SOI; breakdown electric field; buried oxide; crystalline quality; high-temperature oxidation; low-dose SIMOX wafers; oxygen ion beam implantation; pipe leakage; Breakdown voltage; Costs; Crystallization; Degradation; Electric breakdown; Equations; Oxidation; Shadow mapping; Steel; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
Type :
conf
DOI :
10.1109/SOI.1995.526507
Filename :
526507
Link To Document :
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