Title :
Narrow-band band-pass filters on silicon substrates at 30 GHz
Author :
Yu, D.S. ; Cheng, C.F. ; Chan, K.T. ; Chin, Albert ; McAlister, S.P. ; Zhu, C. ; Li, M.F. ; Kwong, D.L.
Author_Institution :
Dept. of Electron. Eng., National Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Using optimized ion implantation, we have fabricated high performance 2-pole and 3-pole CPW filters on Si substrates at ∼30 GHz, with very narrow 1.0 (3.1%) GHz and 0.75 (2.5%) GHz pass-band as well as small insertion loss. Microstrip filters on Si show small 3.2 dB loss at 27 GHz, which has smaller size than CPW case without the large coplanar ground planes. In contrast, the nonimplanted filters failed due to the high substrate loss.
Keywords :
band-pass filters; coplanar waveguides; elemental semiconductors; ion implantation; microstrip filters; 27 GHz; 3.2 dB; 30 GHz; CPW filters; band-pass filters; coplanar ground plane; filter fabrication; insertion loss; microstrip filters; narrow band; optimized ion implantation; silicon substrates; substrate loss; Band pass filters; Bandwidth; Conductivity; Coplanar waveguides; Insertion loss; Ion implantation; Microstrip filters; Narrowband; Radio frequency; Silicon;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1338850
