Paramagnetic defects in SIMOX with supplemental implantation of oxygen

We analyzed the impact of supplemental oxygen implantation and subsequent annealing at 1100°C on standard separation-by-implantation-of-oxygen (SIMOX) material, by looking at inherent defects in SIMOX, using low temperature K-band electron spin resonance (ESR). These defects include E_γ´, E_δ´, both oxygen-deficiency centers in the buried oxide (BOX). Also, hydrogen-induced positive charge centers in the BOX, and an oxygen-related shallow donor in the Si, both close to the two BOX/Si interfaces, were studied. Our main conclusion is that the supplemental oxygen implant significantly reduces the E´ generation sensitivity of the BOX. The oxygen related shallow donor density on the other hand, was found to increase by up to a factor of 6