Analysis of overheat mechanisms in Ge/Si heterostructures during molecular beam epitaxy

During the molecular beam epitaxy of Ge film on the Si substrate the heterostructure´s temperature increases comparing to the initials substrate´s temperature when the thickness of the film increases. Since the film growth in the conditions of no controlled temperature increase leads to decrease of the film structure quality the temperature of the substrate should be corrected over the time. When the temperature of the heater increases from 1000°C to 1500°C the overheat grows from 35°C to 90°C.