Title :
Synthesis of buried oxide by plasma implantation with oxygen and water plasma
Author :
Liu, J.B. ; Iyer, S.S.K. ; Min, J. ; Chu, P.K. ; Gronsky, R. ; Hu, C. ; Chueng, N.W.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Separation by plasma implantation of oxygen (SPIMOX) is a novel method for fabricating silicon-on-insulator (SOI) wafers. This method uses plasma immersion ion implantation (PIII) where the desired voltage of implant is applied to a wafer immersed in a plasma. SPIMOX is particularly suited for thin separation by implantation of oxygen (SIMOX) wafer fabrication. High implantation rates can be achieved in SPIMOX. A dose of nearly 1018 cm-2 with an implant current density of 1 mA cm-2 can be achieved in 3 minutes of implantation time. The short implantation time and the simplicity of the implantation equipment makes it a potentially more economical method for fabricating SIMOX wafers. Moreover, the theoretical time for implantation remains constant in SPIMOX with increase in wafer size
Keywords :
MOS integrated circuits; SIMOX; ion implantation; 3 min; SIMOX wafer fabrication; SOI wafers; SPIMOX; Si:O; buried oxide synthesis; implant current density; implantation equipment; implantation rates; plasma immersion ion implantation; plasma implantation; separation by plasma implantation of oxygen; wafer size; Annealing; Implants; Nuclear and plasma sciences; Oxygen; Physics; Plasma immersion ion implantation; Plasma materials processing; Plasma temperature; Silicon; Voltage;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526512
