Synthesis of buried oxide by plasma implantation with oxygen and water plasma

Author

Liu, J.B. ; Iyer, S.S.K. ; Min, J. ; Chu, P.K. ; Gronsky, R. ; Hu, C. ; Chueng, N.W.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1995

fDate

3-5 Oct 1995

Firstpage

166

Lastpage

167

Abstract

Separation by plasma implantation of oxygen (SPIMOX) is a novel method for fabricating silicon-on-insulator (SOI) wafers. This method uses plasma immersion ion implantation (PIII) where the desired voltage of implant is applied to a wafer immersed in a plasma. SPIMOX is particularly suited for thin separation by implantation of oxygen (SIMOX) wafer fabrication. High implantation rates can be achieved in SPIMOX. A dose of nearly 10¹⁸ cm^-2 with an implant current density of 1 mA cm^-2 can be achieved in 3 minutes of implantation time. The short implantation time and the simplicity of the implantation equipment makes it a potentially more economical method for fabricating SIMOX wafers. Moreover, the theoretical time for implantation remains constant in SPIMOX with increase in wafer size

Keywords

MOS integrated circuits; SIMOX; ion implantation; 3 min; SIMOX wafer fabrication; SOI wafers; SPIMOX; Si:O; buried oxide synthesis; implant current density; implantation equipment; implantation rates; plasma immersion ion implantation; plasma implantation; separation by plasma implantation of oxygen; wafer size; Annealing; Implants; Nuclear and plasma sciences; Oxygen; Physics; Plasma immersion ion implantation; Plasma materials processing; Plasma temperature; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1995. Proceedings., 1995 IEEE International

Conference_Location

Tucson, AZ

Print_ISBN

0-7803-2547-8

Type

conf

DOI

10.1109/SOI.1995.526512

Filename

526512