DocumentCode
3490883
Title
Improvement in electrical properties of SIMOX by high-temperature oxidation
Author
Mrstik, B.J. ; McMarr, P.J. ; Hughes, H.L. ; Anc, M.J. ; Krull, W.A.
Author_Institution
Naval Res. Lab., Washington, DC, USA
fYear
1995
fDate
3-5 Oct 1995
Firstpage
174
Lastpage
175
Abstract
For the SIMOX process to become a viable technology, it must be capable of producing a buried oxide (BOX) layer with a high breakdown field and a low density of defects which short the superficial Si layer with the substrate. In this paper we discuss a low cost technique for significantly improving the electrical properties of the BOX. The process is compatible with the formation of a superficial Si layer with a very low density of dislocations
Keywords
SIMOX; buried layers; dislocation density; electric breakdown; integrated circuit technology; oxidation; BOX layer; SIMOX process; Si; buried oxide layer; dislocation density; electrical properties; high breakdown field; high-temperature oxidation; low cost technique; low defects density; superficial Si layer; Annealing; Breakdown voltage; Costs; Dielectric materials; Dielectric substrates; Etching; Implants; Oxidation; Propellants; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location
Tucson, AZ
Print_ISBN
0-7803-2547-8
Type
conf
DOI
10.1109/SOI.1995.526516
Filename
526516
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