Title :
A 10 GHz dielectric resonator oscillator using GaN technology
Author :
Rice, P. ; Moore, M. ; Barnes, A.R. ; Uren, M.J. ; Malbert, N. ; Labat, N. ; Sloan, R.
Author_Institution :
Dept. of Electr. & Electron. Eng., UMIST, Manchester, UK
Abstract :
A 10 GHz AlGaN/GaN HEMT-based dielectric resonator oscillator (DRO) is presented. This device exhibits -118dBc/Hz phase noise at 100KHz offset frequency range and is the lowest yet reported. This phase noise and power capabilities of GaN HEMT oscillators are compared to those of two mature technologies, an Infineon SiGe HBT (BFP620) and Transcom GaAs pHEMT (TC1401). The oscillator output power density using a GaN HEMT was found to be 14 times greater than using an equivalent GaAs pHEMT. Phase noise improvements between two different GaN devices, resulting from developments in GaN technology, are also presented.
Keywords :
III-V semiconductors; dielectric resonator oscillators; gallium compounds; high electron mobility transistors; integrated circuit noise; microwave integrated circuits; phase noise; silicon compounds; 10 GHz; 100 KHz; AlGaN; BFP620; GaAs pHEMT; GaN; GaN HEMT oscillators; GaN devices; GaN technology; HEMT-based dielectric resonator oscillator; Infineon; SiGe; SiGe HBT; TC1401; Transcom; phase noise; power capabilities; power density; Aluminum gallium nitride; Dielectrics; Frequency; Gallium arsenide; Gallium nitride; HEMTs; Oscillators; PHEMTs; Phase noise; Silicon germanium;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1338858
