Title :
“Smart cut”: a promising new SOI material technology
Author :
Bruel, M. ; Aspar, B. ; Charlet, B. ; Maleville, C. ; Poumeyrol, T. ; Soubie, A. ; Auberton-Herve, A.J. ; Lamure, J.M. ; Barge, T. ; Metral, F. ; Trucchi, S.
Author_Institution :
LETI, CEN, Grenoble, France
Abstract :
Silicon On Insulator technologies appear to be a key issue for low-power, low-voltage technologies (≈1.5 V) and will play a major role in ULSI developments. Today two SOI material technologies are in competition in the very thin SOI film market: SIMOX (Separation by IMplanted OXygen) and BESOI (Bond and Etch Back SOI) Technology. We have developed a new SOI material technology using a bonding technique combined with an ion implantation step, which aims to overcome the remaining limitations of both the above techniques. This process was developed as the “IMPROVE” (IMplanted PROtons Voids Engineering) process and is henceforth referred to as “Smart-cut”. The process is implemented for fabrication of Unibond wafers
Keywords :
ULSI; ion implantation; silicon-on-insulator; wafer bonding; IMPROVE process; LV low-power technologies; SOI material technology; Si; Smart cut; Unibond wafer fabrication; bonding technique; implanted protons voids engineering process; ion implantation step; very thin SOI film; Boats; Etching; Hydrogen; Ion implantation; Materials science and technology; Oxygen; Silicon on insulator technology; Surface topography; Ultra large scale integration; Wafer bonding;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526518
