An original approach of the effect source resistance for FET devices

This paper discussed an efficient way for modeling the power amplifiers, with the development of a new theoretical approach for the FET structures, where we can detect the presence of a source resistance. We check the analytical approach here proposed with some particular devices, and compare all results with those ones generated with an efficient platform used to simulated RF and microwave devices, that is the advanced design systems - ADS. These studies confirms that the introduction of a big source resistance to control the linearity of the amplifier can provokes not only a proportional reduction in the fundamental component just due to the fact of the polarization process, but also a sensible change in the performance of the FET structures, since the perfect control of the linearity has been demanded strongly in the implementation of all modern HDTV equipments.