• DocumentCode
    3490925
  • Title

    A low-power high performance 4GHz SiGe HBT VCO

  • Author

    Khalil, Ahmed I. ; Katzin, Peter

  • Author_Institution
    Hittite Microwave Corp., Chelmsford, MA, USA
  • Volume
    3
  • fYear
    2004
  • fDate
    6-11 June 2004
  • Firstpage
    1505
  • Abstract
    This paper reports the lowest VCO phase noise achieved using SiGe HBT process at 4GHz. Te SiGE HBT devices have an fT of 47GHz. The differential LC-tuned VCO operates over the voltage range 2.7 to 3.3 supply voltage. It has a 4.2GHz center frequency, 13% tuning range, -106 dBc/Hz at 100KHz offset and -128 dBc/Hz at 1MHz offset. The core power dissipation is 26mW from a 3.3 V supply. A high figure of merit (-186.35) is also achieved. The die area, including buffers and bond pads, is 1 mm2.
  • Keywords
    heterojunction bipolar transistors; integrated circuit noise; low-power electronics; microwave integrated circuits; phase noise; silicon compounds; voltage-controlled oscillators; 1 MHz; 100 KHz; 2.7 to 3.3 V; 26 mW; 4 GHz; 4.2 GHz; 47 GHz; SiGe; SiGe HBT; differential LC-tuned VCO; high performance HBT VCO; low-power HBT VCO; phase noise; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Phase noise; Power dissipation; Silicon germanium; Tellurium; Tuning; Voltage; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2004 IEEE MTT-S International
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-8331-1
  • Type

    conf

  • DOI
    10.1109/MWSYM.2004.1338860
  • Filename
    1338860
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3490925