DocumentCode
3490938
Title
Low phase-noise 5 GHz AlGaN/GaN HEMT oscillator integrated with BaxSr1-xTiO3 thin films
Author
Xu, Hongtao ; Sanabria, Christopher ; Pervez, Nadia K. ; Keller, Stacia ; Mishra, Umesh K. ; York, Robert A.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume
3
fYear
2004
fDate
6-11 June 2004
Firstpage
1509
Abstract
A C-band MMIC oscillator in GaN HEMT technology with BaxSr1-xTiO3 (BST) film capacitors integrated as DC block capacitors has been designed, fabricated and characterized. The lumped LC resonator works with the common gate HEMT to generate negative resistance. The oscillator, based on AlGaN/GaN HEMT with 0.7μm gate length and 200μm gate width, delivers 20.5 dBm output power when bias at Vds = 15 V and Vgs = -3 V, with dc-to-RF efficiency of 12.5%. Phase noise was measured to be -105 dBc/Hz at 100 KHz offset from 5.3 GHz carrier. The results show that AlGaN/GaN HEMTs are attractive to both high power and low noise microwave source application.
Keywords
MMIC oscillators; barium compounds; gallium compounds; high electron mobility transistors; integrated circuit noise; negative resistance; oscillators; phase noise; thin film capacitors; -3 V; 0.7 microns; 100 KHz; 12.5 percent; 15 V; 200 microns; 5 GHz; 5.3 GHz; AlGaN; BST film capacitors; BaSrTiO; C-band MMIC oscillator; DC block capacitors; GaN; GaN HEMT; common gate HEMT; high electron mobility transistor; high power microwave source; low noise microwave source; low phase-noise HEMT oscillator; lumped LC resonator; monolithic microwave integrated circuit; negative resistance; phase noise; thin films; Aluminum gallium nitride; Binary search trees; Capacitors; Gallium nitride; HEMTs; MMICs; Oscillators; Phase noise; Power generation; Strontium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2004 IEEE MTT-S International
ISSN
0149-645X
Print_ISBN
0-7803-8331-1
Type
conf
DOI
10.1109/MWSYM.2004.1338861
Filename
1338861
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