Title :
Low phase-noise 5 GHz AlGaN/GaN HEMT oscillator integrated with BaxSr1-xTiO3 thin films
Author :
Xu, Hongtao ; Sanabria, Christopher ; Pervez, Nadia K. ; Keller, Stacia ; Mishra, Umesh K. ; York, Robert A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
A C-band MMIC oscillator in GaN HEMT technology with BaxSr1-xTiO3 (BST) film capacitors integrated as DC block capacitors has been designed, fabricated and characterized. The lumped LC resonator works with the common gate HEMT to generate negative resistance. The oscillator, based on AlGaN/GaN HEMT with 0.7μm gate length and 200μm gate width, delivers 20.5 dBm output power when bias at Vds = 15 V and Vgs = -3 V, with dc-to-RF efficiency of 12.5%. Phase noise was measured to be -105 dBc/Hz at 100 KHz offset from 5.3 GHz carrier. The results show that AlGaN/GaN HEMTs are attractive to both high power and low noise microwave source application.
Keywords :
MMIC oscillators; barium compounds; gallium compounds; high electron mobility transistors; integrated circuit noise; negative resistance; oscillators; phase noise; thin film capacitors; -3 V; 0.7 microns; 100 KHz; 12.5 percent; 15 V; 200 microns; 5 GHz; 5.3 GHz; AlGaN; BST film capacitors; BaSrTiO; C-band MMIC oscillator; DC block capacitors; GaN; GaN HEMT; common gate HEMT; high electron mobility transistor; high power microwave source; low noise microwave source; low phase-noise HEMT oscillator; lumped LC resonator; monolithic microwave integrated circuit; negative resistance; phase noise; thin films; Aluminum gallium nitride; Binary search trees; Capacitors; Gallium nitride; HEMTs; MMICs; Oscillators; Phase noise; Power generation; Strontium;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1338861
