A 2.4GHz/5.2GHz CMOS power amplifier for dual-band applications

Author

Eo, Yunseong ; Lee, KwangDu

Author_Institution

I-networking Lab., Samsung Adv. Inst. of Technol., Kyunggi-do, South Korea

Volume

3

fYear

2004

fDate

6-11 June 2004

Firstpage

1539

Abstract

A 2.4GHz/5.2GHz CMOS dual band power amplifier is presented in this work. In order to design high power CMOS amplifier, various power NMOS transistor cells are scrutinized. Considering small signal and large signal characteristics of power NMOS cell, 2×128×5μm cell is chosen for our dual band PA. A modified macro model is used for the simulation accuracy. As for selecting desired band, there are band-switched matching networks on both input and load of the first stage amplifier, which is followed by NMOS SPDT switch. At 2.4Ghz and 5.2GHz bands, the achieved values of Psat are 9.7dBm and 19.5dBm, respectively. In case of PAE, we obtain 15.3% at 5.2GHz.

Keywords

CMOS integrated circuits; microwave power amplifiers; 2.4 GHz; 5.2 GHz; CMOS power amplifier; NMOS SPDT switch; band-switched matching networks; dual band power amplifier; first stage amplifier; large signal characteristics; modified macro model; power NMOS transistor cells; small signal characteristics; Broadband amplifiers; CMOS technology; Circuits; Dual band; MOS devices; MOSFETs; Power amplifiers; Radio frequency; Semiconductor device modeling; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1338871

Filename

1338871