Multi-physics simulation and reliability analysis for RF-MEMS devices

RF-MEMS is a disruptive technology, commonly regarded as key for future telecommunication systems as it potentially alleviates several of the natural trade-offs presented by current telecommunication systems. This new technology however does not percolate in the industry by lack of realized reliability. This can be attributed to a lack of understanding of the very specific failure mechanisms of RF-MEMS devices and detailed underlying physical behaviours. In this paper, we introduce the basic design of electrostatically actuated capacitive RF-MEMS devices produced in thin-film technologies. We stress the specific reliability issues associated with these devices and the environment they have to function in. We highlight the issues related to the dielectric charging, the packaging, the thermal stability and finally the RF-specific power- handling issues.