Title :
The effect of argon plasma cleaning on the surface characteristics of GaAs substrate
Author :
Wang, Yunhua ; Zhou, Lu ; Jia, Baoshan ; Bai, Duanyuan ; Yang, Xu ; Gao, Xin ; Bo, Baoxue
Author_Institution :
Nat. Key Lab. of High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
Abstract :
In this paper, GaAs substrate samples were treated by different Ar ion plasma cleaning process, and then a SiO2 passivation layer was deposited by radio frequency magnetron sputtering to avoid reoxidation or recontamination of the surface. Morphology, composition and fluorescence properties of GaAs substrate surface were investigated respectively by scanning electron microscope, energy dispersive X-ray spectrometer and rapid photoluminescence mapper. The results showed that GaAs samples treated under the condition of sputtering power 8W, chamber pressure 4.7Pa, Ar flow rate 40sccm and cleaning time 48min are free from damage, the oxygen and carbon content on the sample surface decreased obviously. Photoluminescence (PL) intensity increased by 66.73 %.
Keywords :
III-V semiconductors; X-ray chemical analysis; fluorescence; gallium arsenide; passivation; photoluminescence; plasma deposition; scanning electron microscopy; silicon compounds; spectral line intensity; sputter deposition; surface cleaning; surface composition; surface morphology; Ar flow rate; GaAs; GaAs substrate; GaAs-SiO2; PL intensity; argon ion plasma cleaning; carbon content; chamber pressure; cleaning time; energy dispersive X-ray spectrometer; fluorescence properties; free from damage; oxygen carbon; oxygen content; passivation layer; power 8 W; pressure 4.7 Pa; radiofrequency magnetron sputtering; rapid photoluminescence mapper; scanning electron microscopy; sputtering power; surface characteristics; surface composition; surface morphology; Argon; Gallium arsenide; Plasmas; Surface cleaning; Surface morphology; Ar ion; GaAs surface; fluorescence properties; plasma cleaning;
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location :
Changchun, Jilin
Print_ISBN :
978-1-4673-2638-4
DOI :
10.1109/ICoOM.2012.6316205
