Title :
Study on neutral sulphur passivation of gallium antimonide surface
Author :
An, Ning ; Liu, Guojun ; Wei, Zhipeng ; Deng, Rui ; Fang, Xuan ; Gao, Xian ; Zou, Yonggang ; Li, Mei ; Ma, Xiaohui
Author_Institution :
Nat. Key Lab. of High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
Abstract :
We here report a new passivation method, with neutral sulphur, (NH4)2S, to modify the GaSb surface. The optical and chemical properties of GaSb surface before and after neutral passivation are investigated using x-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) mapping. Neutral (NH4)2S passivation led to 20 times enhancement in photoluminescence (PL) intensity, lower oxide content, and a less amount of elemental Sb than the untreated sample. The passivtion effect results from the significant reduction in surface states due to the formation of Ga and Sb sulfide species. Compared to the regular alkaline (NH4)2S treatment, surface passivation intensity and homogeneity are both improved. Our studies also indicate the neutral sulphur passivation treated surface is much more stable in air for at least 48h.
Keywords :
III-V semiconductors; X-ray photoelectron spectra; gallium compounds; passivation; photoluminescence; spectral line intensity; surface morphology; surface states; GaSb; GaSb surface; PL intensity enhancement; X-ray photoelectron spectroscopy; XPS; chemical properties; gallium antimonide surface; neutral sulphur passivation; optical properties; oxide content; photoluminescence; sulfide species; surface passivation homogeneity; surface passivation intensity; surface states; Chemicals; Gallium; Passivation; Photoluminescence; Surface cleaning; Surface morphology; GaSb surface passivation; PL; XPS; neutral (NH4)2S;
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location :
Changchun, Jilin
Print_ISBN :
978-1-4673-2638-4
DOI :
10.1109/ICoOM.2012.6316207
