Title :
60GHz quadrature doppler radar transceiver in a 0.25μm SiGe BiCMOS technology
Author :
Veenstra, Hugo ; Notten, Marc ; XiongChuan Huang ; Long, John R.
Author_Institution :
Philips Res., Eindhoven
Abstract :
A 60GHz Doppler radar for short-range presence detection applications in the unlicensed 60GHz band is described. The 1.1times2.1 mm2 SiGe:C BiCMOS IC includes a 60GHz VCO, a polyphase filter for quadrature signal generation, a low-noise amplifier with current reuse quadrature down-conversion mixer and a power amplifier. The VCO can be tuned from 59.5-61.5GHz. The receiver quadrature accuracy is better than 27dB across a plusmn10MHz IF bandwidth. With a single-ended input drive of the differential input, the receiver achieves a conversion gain of 55dB and a DSB noise figure of 22.9dB. Assuming 4dBi antenna gains, the radar IC supports up to 5m range.
Keywords :
BiCMOS analogue integrated circuits; Doppler radar; field effect MIMIC; low noise amplifiers; millimetre wave power amplifiers; transceivers; voltage-controlled oscillators; BiCMOS technology; SiGe; VCO; frequency 59.5 GHz to 61.5 GHz; gain 55 dB; low-noise amplifier; noise figure 22.9 dB; polyphase filter; power amplifier; quadrature Doppler radar transceiver; quadrature down-conversion mixer; quadrature signal generation; short-range presence detection; size 0.25 mum; BiCMOS integrated circuits; Doppler radar; Filters; Germanium silicon alloys; Low-noise amplifiers; Radar antennas; Radar detection; Silicon germanium; Transceivers; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference, 2008. ESSCIRC 2008. 34th European
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-2361-3
Electronic_ISBN :
1930-8833
DOI :
10.1109/ESSCIRC.2008.4681838
