Modeling and stability in MOS transistor circuits

Author

Tadeusiewicz, Michal

Author_Institution

Tech. Univ. Lodz, Poland

Volume

1

fYear

1998

fDate

1998

Firstpage

71

Abstract

In this paper the Shichman-Hodges large signal model of a MOS transistor is transformed to an equivalent form which is very useful both for qualitative as well as quantitative analysis. A class of dynamic circuits including MOS transistors, represented by the developed model, is considered and it is shown that any circuit belonging to this class is Lagrange stable. In a special case where no independent source acts in the circuit it is proved that the origin is the only equilibrium point and the circuit is globally asymptotically stable

Keywords

MOSFET; MOSFET circuits; asymptotic stability; circuit stability; equivalent circuits; nonlinear network analysis; semiconductor device models; Lagrange stable circuit; MOS transistor circuits; MOSFET large signal model; Shichman-Hodges large signal model; dynamic circuits; equilibrium point; equivalent form; globally asymptotically stable; stability; Centralized control; Circuit stability; Electronic mail; Equations; Equivalent circuits; Lagrangian functions; MOSFET circuits; Signal analysis; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 1998 IEEE International Conference on

Conference_Location

Lisboa

Print_ISBN

0-7803-5008-1

Type

conf

DOI

10.1109/ICECS.1998.813273

Filename

813273