Title :
Modeling and stability in MOS transistor circuits
Author :
Tadeusiewicz, Michal
Author_Institution :
Tech. Univ. Lodz, Poland
Abstract :
In this paper the Shichman-Hodges large signal model of a MOS transistor is transformed to an equivalent form which is very useful both for qualitative as well as quantitative analysis. A class of dynamic circuits including MOS transistors, represented by the developed model, is considered and it is shown that any circuit belonging to this class is Lagrange stable. In a special case where no independent source acts in the circuit it is proved that the origin is the only equilibrium point and the circuit is globally asymptotically stable
Keywords :
MOSFET; MOSFET circuits; asymptotic stability; circuit stability; equivalent circuits; nonlinear network analysis; semiconductor device models; Lagrange stable circuit; MOS transistor circuits; MOSFET large signal model; Shichman-Hodges large signal model; dynamic circuits; equilibrium point; equivalent form; globally asymptotically stable; stability; Centralized control; Circuit stability; Electronic mail; Equations; Equivalent circuits; Lagrangian functions; MOSFET circuits; Signal analysis; Voltage control;
Conference_Titel :
Electronics, Circuits and Systems, 1998 IEEE International Conference on
Conference_Location :
Lisboa
Print_ISBN :
0-7803-5008-1
DOI :
10.1109/ICECS.1998.813273
