The optical characterization of GaSb treatment by sodium sulfide solution

Author

Lang, Yue ; Wei, Zhipeng ; Zou, Yonggang ; Li, Mei ; Hao, Yongqin ; Li, Zhanguo ; Liu, Guojun ; Ma, Xiaohui ; Li, Jinhua ; Fang, Xuan ; Fang, Fang ; Tian, Shanshan

Author_Institution

Nat. Key Lab. of High-Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2012

fDate

23-25 Aug. 2012

Firstpage

38

Lastpage

40

Abstract

In this paper, the oxide layer of surface of GaSb could be removed by passivation solution. Moreover, different passivation solution have different passivation effect. After passivation treatment, the PL intensity was enlarged. Then the influence of prove passivation time on the intensity of PL was also discussed. When passivation time was 270s, the sample´s intensity of PL was the strongest. Additionally, this passivation treatment could improve the whole substrate´s PL intensity.

Keywords

III-V semiconductors; gallium compounds; passivation; photoluminescence; spectral line intensity; GaSb; optical characterization; oxide layer; passivation solution; passivation treatment; sodium sulfide solution; substrate PL intensity; time 270 s; Chemicals; Corrosion; Microelectronics; Passivation; Rough surfaces; Surface roughness; Density of surface states; GaSb; PL; Sodium sulfide;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics and Microelectronics (ICOM), 2012 International Conference on

Conference_Location

Changchun, Jilin

Print_ISBN

978-1-4673-2638-4

Type

conf

DOI

10.1109/ICoOM.2012.6316210

Filename

6316210