Title :
3~5-GHz SiGe UWB LNA Using On-Chip Transformer for Broadband Matching
Author :
EL-Gharniti, Ouail ; Kerhervé, Eric ; Bégueret, Jean-Baptiste ; Belot, Didier
Author_Institution :
Lab. IXL, Univ. Bordeaux 1, Talence
Abstract :
A low noise amplifier (LNA) for ultra-wideband (UWB) systems operating in 3~5GHz frequency range is presented. The LNA circuit is a cascade topology with inductively degeneration transistor. A new input impedance matching network based on monolithic transformers was proposed to overcome to the problem of broadband matching without degrading the noise performance and power delivery. The LNA achieves a power gain of 13 dB with an input matching of -9dB over the band, , a -3 dB bandwidth of 2.9 - 7.8 GHz, an input IP3 of -2dBm, a minimum noise figure (NF) of 4.0 - 4.6dB across the entire bandwidth, while consuming 9 mW at 1.8V supply
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; impedance matching; low noise amplifiers; microwave amplifiers; 1.8 V; 13 dB; 3 to 5 GHz; 4.0 to 4.6 dB; 9 mW; SiGe; UWB LNA; broadband matching on-chip transformer; cascade topology; inductive degeneration; input impedance matching; low noise amplifier; monolithic transformers; ultra-wideband systems; Bandwidth; Broadband amplifiers; Circuit noise; Frequency; Germanium silicon alloys; Impedance matching; Low-noise amplifiers; Network topology; Silicon germanium; Ultra wideband technology;
Conference_Titel :
Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0303-0
DOI :
10.1109/ESSCIR.2006.307579
