Title :
Low-Power UWB LNA and Mixer using 0.18-μm CMOS Technology
Author :
Satyanarayana Reddy Karri ; Arasu, M. Annamalai ; Wong, King Wah ; Zheng, Yuanjin ; Lin, Fujiang
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
A low-power fully integrated wideband low noise amplifier (LNA) and down-conversion mixer are designed for direct sequence-UWB (DS-UWB) RF front-end using 0.18-μm CMOS technology. The LNA is designed to cover the full UWB bandwidth of 7.5GHz. Measurements show this LNA achieves gain of 14 16.5dB, noise figure (NF) of 4.2 - 4.8dB and IIP3 of -8dBm, consuming 6mA of current from a 1.8-V supply. The mixer is designed using Gilbert-cell topology to work for both DS-UWB bands. Over both bands, the mixer achieves voltage gain of 4 - 6dB, IIP3 of -1dBm, and NF of 14 to 18dB with a supply current of 11.5mA from a 1.8-V supply.
Keywords :
CMOS analogue integrated circuits; low noise amplifiers; low-power electronics; microwave amplifiers; mixers (circuits); 0.18 micron; 1.8 V; 11.5 mA; 14 to 16.5 dB; 14 to 18 dB; 4 to 6 dB; 4.2 to 4.8 dB; 6 mA; 7.5 GHz; CMOS technology; Gilbert-cell topology; UWB LNA; direct sequence-UWB RF front-end; down-conversion mixer; ultrawideband low noise amplifier; Bandwidth; Broadband amplifiers; CMOS technology; Current measurement; Gain measurement; Low-noise amplifiers; Noise figure; Noise measurement; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0303-0
DOI :
10.1109/ESSCIR.2006.307580
