Integrating a SiGe BiCMOS Power Amplifier In a 5.8GHz Transceiver

Author

Romney, Matt ; Farahvash, Shayan ; Quek, Chee ; Liu, Xiong ; Schwan, David ; Koupal, Robert

Author_Institution

Micro Linear Corp., San Jose, CA

fYear

2006

fDate

19-21 Sept. 2006

Firstpage

275

Lastpage

278

Abstract

Integrating a power amplifier with the rest of a transceiver poses unique challenges particularly at 5.8GHz, where parasitic couplings are inevitable. This paper proposed a system and circuit techniques that are necessary in order to realize a RFIC transceiver with an integrated power amplifier. These techniques were utilized to make a 5.8GHz GFSK transceiver with an integrated and highly efficient power amplifier in 0.18mum SiGe BiCMOS technology. The complete transceiver exhibit an output power of 21 dBm with no stability problem and power added efficiency better than 30%

Keywords

BiCMOS integrated circuits; Ge-Si alloys; frequency shift keying; integrated circuit design; microwave integrated circuits; power amplifiers; transceivers; 0.18 micron; 5.8 GHz; BiCMOS power amplifier; GFSK transceiver; RFIC transceiver; SiGe; circuit techniques; integrated power amplifier; BiCMOS integrated circuits; Coupling circuits; Germanium silicon alloys; High power amplifiers; Integrated circuit technology; Power amplifiers; Power generation; Radiofrequency integrated circuits; Silicon germanium; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European

Conference_Location

Montreux

ISSN

1930-8833

Print_ISBN

1-4244-0303-0

Type

conf

DOI

10.1109/ESSCIR.2006.307584

Filename

4099757