RF circuits fabricated with CMOS-compatible SiGe HBT process module

Author

Pierschel, Michael ; Winkler, Wolfgang ; Rossberg, Matthias

Author_Institution

Inst. for Semicond. Phys., Frankfurt, Germany

Volume

1

fYear

1998

fDate

1998

Firstpage

179

Abstract

We report results of experimental circuits fabricated in a new modular SiGe HBT technology. A variety of available active and passive devices are presented, including ring oscillators, frequency dividers, transimpedance amplifiers and Colpitts oscillators. The spectrum of devices which have been modeled and used includes: SiGe HBTs with f_t and f_max of 40 GHz, polysilicon resistors, MIM capacitances, inductors and varicaps. The measurements show first experimental results obtained with a CMOS-compatible SiGe HBT module. ECL gate delays of 23 ps where measured. The VCO´s operate at 725 MHz and 2 GHz. The frequency divider operates at 6.2 GHz down to 1.2 V. These circuits are important for wireless and optical fibre communication in the frequency range 1-10 GHz

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC; UHF integrated circuits; heterojunction bipolar transistors; integrated circuit technology; semiconductor materials; 1.2 V; 725 MHz to 10 GHz; CMOS-compatible SiGe HBT process module; Colpitts oscillators; ECL gate delays; MIM capacitances; RF circuits; SHF ICs; SiGe; UHF ICs; VCO; active devices; frequency dividers; inductors; modular HBT BiCMOS process; modular SiGe HBT technology; passive devices; polysilicon resistors; ring oscillators; transimpedance amplifiers; varicaps; CMOS technology; Circuits; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Optical amplifiers; Optical frequency conversion; Radio frequency; Ring oscillators; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 1998 IEEE International Conference on

Conference_Location

Lisboa

Print_ISBN

0-7803-5008-1

Type

conf

DOI

10.1109/ICECS.1998.813297

Filename

813297