Title :
High-performance monolithic amplifiers in low microwave bands using GaAs MESFET technology
Author :
Portilla, Joaquín ; Pascual, Juan Pablo ; Garcia, Hector ; Artal, Eduardo
Author_Institution :
Cantabria Univ., Santander, Spain
Abstract :
This work reports the design, integration and measurement of two kinds of MMIC amplifiers working in the low microwave bands: a high-efficiency amplifier in the 2.4 GHz band and gain voltage controlled amplifiers in the 0.5-2 GHz band. The monolithic technology employed in the integration of these circuits is F20 of GEC-Marconi, which uses 0.5 μm gate length MESFETs. Excellent performances of power-added-efficiency and gain voltage control have been obtained by optimising the active device performances
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; field effect MMIC; gallium arsenide; integrated circuit design; 0.5 micron; 0.5 to 2.4 GHz; GEC-Marconi F20 technology; GaAs; GaAs MESFET technology; MMIC amplifiers; gain voltage controlled amplifiers; high-efficiency amplifier; high-performance monolithic amplifiers; low microwave bands; Communication system control; Frequency; Gallium arsenide; Integrated circuit measurements; MESFETs; MMICs; Microwave amplifiers; Microwave bands; Microwave technology; Voltage control;
Conference_Titel :
Electronics, Circuits and Systems, 1998 IEEE International Conference on
Conference_Location :
Lisboa
Print_ISBN :
0-7803-5008-1
DOI :
10.1109/ICECS.1998.813298
