Title :
The Design and Implementation of a Low-Overhead Supply-Gated SRAM
Author :
Kuang, J.b. ; Ngo, H.c. ; Nowka, K.J. ; Ehrenreich, S. ; Drake, A.J. ; Pille, J. ; Kosonocky, S. ; Joshi, R. ; Nguyen, T. ; Vo, I.
Author_Institution :
IBM Res., Austin, TX
Abstract :
The paper reports a virtual supply domain control technique for low-leakage SRAMs. This method encompasses cell-based sleep circuit tiling, sequentially regulated power-on/off, and flexible domain interfacing. The usual overhead associated with driving sleep transistors is significantly reduced by powering on/off gradually. Over 260times and 3times leakage reduction is observed in 65nm-technology hardware for hard and soft gating, respectively, including the leakage of control and drive circuits. Measured virtual domain power-on latency is compatible with high-frequency designs
Keywords :
SRAM chips; driver circuits; 65 nm; cell-based sleep circuit tiling; drive circuits; flexible domain interfacing; high-frequency designs; low-leakage SRAM; sequentially regulated power; supply-gated SRAM; virtual domain power latency; virtual supply domain control; Random access memory;
Conference_Titel :
Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0303-0
DOI :
10.1109/ESSCIR.2006.307587
