Title :
A CMOS source-buffered differential input stage with high EMI suppression
Author :
Redouté, Jean-Michel ; Steyaert, Michiel
Author_Institution :
Dept. ESAT, Katholieke Univ. Leuven, Leuven
Abstract :
This paper introduces a CMOS source-buffered differential input stage exhibiting a high degree of immunity against electromagnetic interferences (EMI) which are applied on its input pins. The measurements of a test-IC illustrate that the source-buffered differential pair generates a maximal EMI induced input offset voltage of 116 mV when a 750 mV RMS EMI signal is injected in its inputs, while a classic differential pair output is saturated with a maximal offset of 610 mV under the same circumstances.
Keywords :
CMOS integrated circuits; electromagnetic interference; integrated circuit testing; CMOS source; buffered differential input stage; electromagnetic interferences; high EMI suppression; integrated circuit testing; source-buffered differential pair; Bluetooth; Electromagnetic compatibility; Electromagnetic interference; Electromagnetic measurements; Frequency; Immunity testing; Pins; Product design; Signal generators; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2008. ESSCIRC 2008. 34th European
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-2361-3
Electronic_ISBN :
1930-8833
DOI :
10.1109/ESSCIRC.2008.4681856
