A Sub-1 V, 10 ppm/Â°C, Nanopower Voltage Reference Generator

Author

De Vita, G. ; Iannaccone, Giuseppe

Author_Institution

Dipt. di Ingegneria dell´´Informazione: Universita di Pisa

fYear

2006

fDate

19-21 Sept. 2006

Firstpage

307

Lastpage

310

Abstract

An extreme low power voltage reference generator operating with a supply voltage ranging from 0.9 to 4 V has been implemented in AMS 0.35 mum CMOS process. The maximum supply current measured at the maximum supply voltage and at 80 degC is 70 nA. A temperature coefficient of 10 ppm/degC is achieved by means of a perfect suppression of the temperature dependence of the mobility, the compensation of the channel length modulation effect on the temperature coefficient and the absence of the body effect. The power supply rejection ratios without any filtering capacitor at 100 Hz and 10 MHz are lower than -53 and -42 dB, respectively. The occupied chip area is 0.045 mm²

Keywords

CMOS integrated circuits; carrier mobility; reference circuits; 0.35 micron; 0.9 to 4 V; 70 nA; 80 C; AMS CMOS process; channel length modulation effect compensation; mobility temperature dependence; nanopower voltage reference generator; temperature dependence suppression; CMOS process; CMOS technology; Circuits; DC generators; Low voltage; MOSFETs; Photonic band gap; Power generation; Temperature dependence; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European

Conference_Location

Montreux

ISSN

1930-8833

Print_ISBN

1-4244-0303-0

Type

conf

DOI

10.1109/ESSCIR.2006.307592

Filename

4099765