Title :
30GHz-band 5.8W high-power AlGaN/GaN heterojunction-FET
Author :
Inoue, Takashi ; Ando, Yuji ; Miyamoto, Hironobu ; Nakayama, Tatsuo ; Okamoto, Yasuhiro ; Hataya, Kohji ; Kuzuhara, Masaaki
Author_Institution :
Adv. HF Device R&D Center, NEC Corp., Shiga, Japan
Abstract :
This paper describes over 5-watt 30GHz-band operation of an AlGaN/GaN heterojunction FET fabricated on a SiC substrate. The device dimensions were optimized and the FET layout configuration was improved to make the best use of high breakdown voltage, high current and high gain characteristics of the short-channel GaN-based FET for advanced power performance. State-of-the-art performance of a saturated power of 5.8W with a linear gain of 9.2dB and a power-added efficiency (PAE) of 43.2% has been achieved employing a single chip having a gate width of 1.0mm and a gate length of 0.25μm. These results indicate that the short-channel AlGaN/GaN heterojunction FET has a promising prospect for a variety of high-power applications at Ka-band and above.
Keywords :
circuit layout; gallium compounds; microwave field effect transistors; power field effect transistors; silicon compounds; wide band gap semiconductors; 0.25 microns; 1.0 mm; 30 GHz; 43.2 percent; 5 W; 5.8 W; 9.2 dB; AlGaN; GaN; Ka-band applications; SiC; SiC substrate; T-shaped gate; advanced power performance; breakdown voltage; high current characteristics; high gain characteristics; high-power applications; high-power heterojunction-FET; layout configuration; linear gain; power-added efficiency; short-channel GaN-based FET; single chip; state-of-the-art performance; Aluminum gallium nitride; Current density; Cutoff frequency; Gallium nitride; Heterojunctions; Microwave FETs; Performance gain; Power generation; Research and development; Silicon carbide;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1338902
