Bandgap voltage references with 1V supply

Author

Ivanov, Vadim V. ; Sanborn, Keith E. ; Filanovsky, Igor M.

Author_Institution

Texas Instrum., Inc., Tucson, AZ

fYear

2006

fDate

Sept. 2006

Firstpage

311

Lastpage

314

Abstract

The structure, operation principle and set of circuit implementations of the low output voltage (~200 mV) bandgap voltage references are presented. References are capable for operating with a supply below 1V, while having accuracy and noise parameters comparable with the traditional 1.2 V bandgap reference. Reference´s core can use substrate, lateral or vertical PNP or NPN transistors, which allows implementation on almost any process. A test reference fabricated with the 50HPA07 BiCMOS process from Texas Instruments shows untrimmed output voltages with less than 1% production scattering (3sigma). The temperature coefficient is below 20 ppm/degC while minimum supply voltage is 1 V at -40 to 125degC range

Keywords

BiCMOS analogue integrated circuits; reference circuits; -40 to 125 C; 1 V; 50HPA07; BiCMOS process; Texas Instruments; bandgap voltage reference; reference core; test reference; untrimmed output voltages; Circuit noise; Circuit testing; Instruments; Low voltage; Mirrors; Photonic band gap; Production; Resistors; Scattering; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European

Conference_Location

Montreux

ISSN

1930-8833

Print_ISBN

1-4244-0303-0

Type

conf

DOI

10.1109/ESSCIR.2006.307593

Filename

4099766