Coupled distributed bragg reflector for high brightness red light-emitting diodes

Author

Tian, Yu ; Xu, Li ; Xue, Zhiwei ; Wei, Zhipeng ; Yu, Fei ; Yonggang, Zou ; Ma, Xiaohui ; Zhao, Wei ; Sui, Qingxue ; Zhang, Zhimin

Author_Institution

Nat. Key Lab. on High-Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2012

fDate

23-25 Aug. 2012

Firstpage

102

Lastpage

104

Abstract

AlGaInP LEDs with Coupled distributed bragg reflectors were grown by Metal-organic Chemical Vapor Deposition (MOCVD). The results showed that the peak wavelength of this structure LED was 625nm, and normal luminous intensity was increased to 164mcd on injection current 20mA from the LED with coupled DBR structure.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; brightness; distributed Bragg reflectors; gallium compounds; indium compounds; light emitting diodes; AlGaInP; LED; MOCVD; coupled DBR structure; coupled distributed Bragg reflector; current 20 mA; high brightness red light-emitting diodes; injection current; metal-organic chemical vapor deposition; normal luminous intensity; wavelength 625 nm; Brightness; Distributed Bragg reflectors; Light emitting diodes; Reflection; Reflectivity; Substrates; AlGaInP LED; MOCVD; coupled distributed bragg reflector;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics and Microelectronics (ICOM), 2012 International Conference on

Conference_Location

Changchun, Jilin

Print_ISBN

978-1-4673-2638-4

Type

conf

DOI

10.1109/ICoOM.2012.6316227

Filename

6316227