Title :
Coupled distributed bragg reflector for high brightness red light-emitting diodes
Author :
Tian, Yu ; Xu, Li ; Xue, Zhiwei ; Wei, Zhipeng ; Yu, Fei ; Yonggang, Zou ; Ma, Xiaohui ; Zhao, Wei ; Sui, Qingxue ; Zhang, Zhimin
Author_Institution :
Nat. Key Lab. on High-Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
Abstract :
AlGaInP LEDs with Coupled distributed bragg reflectors were grown by Metal-organic Chemical Vapor Deposition (MOCVD). The results showed that the peak wavelength of this structure LED was 625nm, and normal luminous intensity was increased to 164mcd on injection current 20mA from the LED with coupled DBR structure.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; brightness; distributed Bragg reflectors; gallium compounds; indium compounds; light emitting diodes; AlGaInP; LED; MOCVD; coupled DBR structure; coupled distributed Bragg reflector; current 20 mA; high brightness red light-emitting diodes; injection current; metal-organic chemical vapor deposition; normal luminous intensity; wavelength 625 nm; Brightness; Distributed Bragg reflectors; Light emitting diodes; Reflection; Reflectivity; Substrates; AlGaInP LED; MOCVD; coupled distributed bragg reflector;
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location :
Changchun, Jilin
Print_ISBN :
978-1-4673-2638-4
DOI :
10.1109/ICoOM.2012.6316227
