Title :
Coplanar AlGaN/GaN HEMT power amplifier MMIC at X-band
Author :
Behtash, R. ; Tobler, H. ; Berlec, F.-J. ; Ziegler, V. ; Leier, H. ; Adelseck, B. ; Martin, T. ; Balmer, R.S. ; Pavlidis, D. ; Jansen, R.H. ; Neuburger, M. ; Schumacher, H.
Author_Institution :
Res. & Technol., DaimlerChrysler AG, Ulm, Germany
Abstract :
A power amplifier MMIC based on AlGaN/GaN HEMTs was fabricated and measured. The coplanar balanced amplifier consists of two 8×100μm transistors. Wilkinson splitters were used to divide and combine the power. BY biasing the amplifier at VDS=30V a maximum CW output power of 39dBm corresponding to 5W/mm with a maximum power added efficiency (PAE) of 33.8% was achieved at 10GHz. Biasing the amplifier at VDS=20V resulted in 36.7% PAE with 37.2dBm CW output power at 10GHz. To the author´s knowledge these results represent the highest output power density so far achieved for GaN-based MMICs at X-band in CW mode.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; high electron mobility transistors; 10 GHz; 20 V; 30 V; 33.8 percent; 36.7 percent; AlGaN; CW mode; GaN; GaN-based MMICs; MODFET integrated circuits; MODFET power amplifiers; Wilkinson splitters; X-band application; coplanar HEMT power amplifier MMIC; coplanar balanced amplifier; power added efficiency; power density; Aluminum gallium nitride; Frequency; Gallium arsenide; Gallium nitride; HEMTs; MMICs; MODFET integrated circuits; Microwave transistors; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1338904
