DocumentCode
3491510
Title
Analysis simulation of facet temperature in semiconductor lasers
Author
Zheng, Xiaogang ; Li, Zaijin ; Li, Te ; Lu, Peng ; Wang, Yong ; Zou, Yonggang ; Qu, Yi ; Bo, Baoxue ; Liu, Guojun ; Ma, Xiaohui
Author_Institution
Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
fYear
2012
fDate
23-25 Aug. 2012
Firstpage
111
Lastpage
114
Abstract
This paper analyzes the damage mechanism of the semiconductor laser cavity surface. Catastrophic optical damage (COD) is one of major mechanisms, which drastically limits laser lifetime and emitted optical power. This paper builds the theoretical model that based on heat source with injection current and optical power to describe the temperature distribution of laser. Through analyzing the edge-emitting semiconductor lasers by using ANSYS, we can describe change of facet temperature distribution before and after the COD events. Through the results of simulation, we can get the conclusion that the main reason of COD is oxidation of the semiconductor laser in facet which caused by optical absorption.
Keywords
laser cavity resonators; oxidation; quantum well lasers; temperature distribution; ANSYS; COD; catastrophic optical damage; damage mechanism; edge-emitting semiconductor lasers; emitted optical power; facet temperature distribution; heat source; injection current; laser lifetime; optical absorption; oxidation; semiconductor laser cavity surface; Cavity resonators; Heating; Integrated optics; Laser theory; Power lasers; Surface emitting lasers; ANSYS; catastrophic optical damage; facet temperature; simulatiom of finite element;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location
Changchun, Jilin
Print_ISBN
978-1-4673-2638-4
Type
conf
DOI
10.1109/ICoOM.2012.6316229
Filename
6316229
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