DocumentCode :
3491510
Title :
Analysis simulation of facet temperature in semiconductor lasers
Author :
Zheng, Xiaogang ; Li, Zaijin ; Li, Te ; Lu, Peng ; Wang, Yong ; Zou, Yonggang ; Qu, Yi ; Bo, Baoxue ; Liu, Guojun ; Ma, Xiaohui
Author_Institution :
Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
fYear :
2012
fDate :
23-25 Aug. 2012
Firstpage :
111
Lastpage :
114
Abstract :
This paper analyzes the damage mechanism of the semiconductor laser cavity surface. Catastrophic optical damage (COD) is one of major mechanisms, which drastically limits laser lifetime and emitted optical power. This paper builds the theoretical model that based on heat source with injection current and optical power to describe the temperature distribution of laser. Through analyzing the edge-emitting semiconductor lasers by using ANSYS, we can describe change of facet temperature distribution before and after the COD events. Through the results of simulation, we can get the conclusion that the main reason of COD is oxidation of the semiconductor laser in facet which caused by optical absorption.
Keywords :
laser cavity resonators; oxidation; quantum well lasers; temperature distribution; ANSYS; COD; catastrophic optical damage; damage mechanism; edge-emitting semiconductor lasers; emitted optical power; facet temperature distribution; heat source; injection current; laser lifetime; optical absorption; oxidation; semiconductor laser cavity surface; Cavity resonators; Heating; Integrated optics; Laser theory; Power lasers; Surface emitting lasers; ANSYS; catastrophic optical damage; facet temperature; simulatiom of finite element;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location :
Changchun, Jilin
Print_ISBN :
978-1-4673-2638-4
Type :
conf
DOI :
10.1109/ICoOM.2012.6316229
Filename :
6316229
Link To Document :
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