Title :
1W power amplifier MMICs for mm-wave applications
Author :
Fuji, Kohei ; Morkner, Henrik
Author_Institution :
Wireless Semicond. Div., Agilent Technol., Inc., San Jose, CA, USA
Abstract :
The development of three-power amplifier MMICs covering 18-28GHz, 26-32GHz, and 37-42GHz frequencies separately is described. The amplifiers employed a unique staggered matching technique and single-ended like topology to maximize RF performances on a smallest die-size. The designed power amplifiers exhibit 20dB of small signal gain, more than 30dBm of 1dB gain compression output power with more 20% typical power added efficiency. These MMIC were fabricated in a 6" foundry PHEMT process and have been demonstrated in fully production capability.
Keywords :
MMIC power amplifiers; high electron mobility transistors; microwave links; millimetre wave power amplifiers; 1 W; 18 to 28 GHz; 20 dB; 20 percent; 26 to 32 GHz; 37 to 42 GHz; 6 inches; MODFET amplifiers; PHEMT process; RF performances maximization; millimeter wave power amplifier; mm-wave applications; power amplifier MMIC; single-ended like topology; smallest die-size; staggered matching technique; Foundries; MMICs; PHEMTs; Power amplifiers; Power generation; Production; Radio frequency; Radiofrequency amplifiers; Signal design; Topology;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1338907
