DocumentCode :
349154
Title :
Electrostatic discharge protection circuits in CMOS ICs using the lateral SCR devices: an overview
Author :
Ker, Ming-Dou
Author_Institution :
Comput. & Commun. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Volume :
1
fYear :
1998
fDate :
1998
Firstpage :
325
Abstract :
An overview on the electrostatic discharge (ESD) protection circuits by using the lateral SCR devices in CMOS ICs is presented. The history of the lateral SCR devices used for on-chip ESD protection is introduced. The practical problem of using the SCR devices in the ESD protection circuits of CMOS ICs is also discussed. Such SCR devices have been found to be accidentally triggered on by the noisy pulses when the ICs are in the normal operating conditions. To overcome this problem, two solutions are proposed to safely apply the SCR devices for effective ESD protection in the CMOS ICs
Keywords :
CMOS integrated circuits; electrostatic discharge; integrated circuit reliability; protection; thyristors; CMOS IC; ESD protection circuits; electrostatic discharge protection; lateral SCR devices; onchip ESD protection; CMOS integrated circuits; CMOS technology; Clamps; Electrostatic discharge; Low voltage; MOS devices; Protection; Resistors; Stress; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits and Systems, 1998 IEEE International Conference on
Conference_Location :
Lisboa
Print_ISBN :
0-7803-5008-1
Type :
conf
DOI :
10.1109/ICECS.1998.813332
Filename :
813332
Link To Document :
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