Title :
1.47 μm high characteristic temperature InGaAsP/InP MQW laser
Author :
Chen, Weibo ; Li, Lin ; Zhao, Jinlong ; Wang, Yong ; Li, Te ; Lu, Peng ; Li, Mei ; Liu, GuoJun
Author_Institution :
Nat. Key Lab. of High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
Abstract :
LASTIP software was applied to simulate symmetric and asymmetric InGaAsP/InP multi-quantum-well (MQW) laser diodes (LDs) emitting at about 1.47 μm. In order to obtain the laser with high-temperature characteristic, the tunnel layer and inner cladding layer was inserted in the laser structure. By comparing the two structures, we found that the tunnel injection (TI) structure can effectively reduce hot carrier effects, the TI asymmetric SCH MQW lasers have good temperature characteristics and smaller threshold current.
Keywords :
III-V semiconductors; claddings; gallium arsenide; hot carriers; indium compounds; laser beams; quantum well lasers; tunnelling; InGaAsP-InP; LASTIP software; MQW LD; TI asymmetric SCH MQW lasers; TI structure; asymmetric multiquantum-well laser diodes; high characteristic temperature; hot carrier effects; inner cladding layer; laser structure; symmetric multiquantum-well laser diodes; threshold current; tunnel injection structure; tunnel layer; wavelength 1.47 mum; Laser theory; Power lasers; Quantum well devices; Semiconductor lasers; Temperature; Threshold current; 1.47 μm; High Characteristic Temperature; InGaAsP/InP; TI; asymmetric SCH MQW;
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location :
Changchun, Jilin
Print_ISBN :
978-1-4673-2638-4
DOI :
10.1109/ICoOM.2012.6316230
