Title :
Transient power in CMOS gates driving LC transmission lines
Author :
Ismail, Yehea I. ; Friedman, Eby G. ; Neves, Jose L.
Author_Institution :
Dept. of Electr. Eng., Rochester Univ., NY, USA
Abstract :
The dynamic and short-circuit power consumption of a CMOS gate driving an LC transmission line as a limiting case of an RLC transmission line is investigated in this paper. Closed form solutions for the output voltage and short-circuit power of a CMOS gate driving an LC transmission line are presented. These solutions agree with circuit simulations within 11% error for a wide range of transistor widths and line impedances for a 0.25 μm CMOS technology. The ratio of the short-circuit to dynamic power is shown to be less than 7% for CMOS gates driving LC transmission lines where the line is matched or underdriven. The total power consumption is expected to decrease as inductance effects becomes more significant as compared to an RC dominated interconnect line
Keywords :
CMOS logic circuits; equivalent circuits; integrated circuit interconnections; logic gates; transient analysis; transmission line theory; 0.25 micron; CMOS gates; LC transmission lines; RLC transmission line; closed form solutions; dynamic power consumption; inductance effects; output voltage; short-circuit power consumption; transient power; CMOS technology; Circuit simulation; Closed-form solution; Distributed parameter circuits; Energy consumption; Impedance; Inductance; Power system transients; Power transmission lines; Voltage;
Conference_Titel :
Electronics, Circuits and Systems, 1998 IEEE International Conference on
Conference_Location :
Lisboa
Print_ISBN :
0-7803-5008-1
DOI :
10.1109/ICECS.1998.813335
