Title :
The simulation analysis of GaInAsP/GaInP diode lasers emitting at 808 nm
Author :
Gai, Kebin ; Li, Lin ; Zhao, Jinlong ; Wang, Yong ; Li, Te ; Lu, Peng ; Su, Chang ; Li, Zhanguo ; Liu, GuoJun
Author_Institution :
Nat. Key Lab. of High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
Abstract :
The properties of the 808nm GaInAsP/GaInP quantum well structure lasers with asymmetric waveguide are numerically studied with a commercial LASTIP simulation program. The simulation results show that the laser performance of the 808nm GaInAsP/GaInP quantum well structure with asymmetric waveguide has a lower threshold current and higher slope efficiency, lower series resistance than symmetric waveguide the structure. Compared to symmetric structure, the lasers with asymmetric waveguide have a smaller band offset between waveguide and QW. These results indicate that a higher laser output power is obtained for the 808nmGaInAsP/GaInP quantum well structure with asymmetric waveguides.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; numerical analysis; quantum well lasers; waveguide lasers; GaInAsP-GaInP; asymmetric waveguide; band offset; commercial LASTIP simulation program; diode lasers; laser output power; laser performance; quantum well structure lasers; series resistance; slope efficiency; threshold current; wavelength 808 nm; Cavity resonators; Diode lasers; Integrated optics; Optical waveguides; Power lasers; Semiconductor lasers; Waveguide lasers; GaInAsP/GaInP quantum well; asymmetric waveguide; lastip simulate; semiconductor laser;
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location :
Changchun, Jilin
Print_ISBN :
978-1-4673-2638-4
DOI :
10.1109/ICoOM.2012.6316236
