A 20dBm Fully-Integrated 60GHz SiGe Power Amplifier with Automatic Level Control

Author

Pfeiffer, Ullrich R.

Author_Institution

IBM T.J. Watson Res. Center, Yorktown Heights, NY

fYear

2006

fDate

19-21 Sept. 2006

Firstpage

356

Lastpage

359

Abstract

A +20dBm, 60 GHz power amplifier (PA) with fully-integrated automatic level control is fabricated in a 0.13 mum SiGe BiCMOS process. At 60 GHz, the PA achieves a peak power gain of IS dB with 13.1 dBm output power at a 1-dB compression and a peak power-added efficiency (PAE) of 12.7 %. The PA uses a single-stage push-pull amplifier topology with center-taped microstrip lines. This enables a highly efficient and compact layout of the amplifier core with a small area of 0.075 mm². An on-chip power detector circuit uses transmission lines with integrated coupling capacitors for output power detection. All bias voltages are generated on chip and are programmable through a three-wire serial digital interface. The PA quiescent current is 62 mA from a 4 V supply

Keywords

BiCMOS integrated circuits; Ge-Si alloys; differential amplifiers; millimetre wave power amplifiers; 0.13 micron; 4 V; 60 GHz; 62 mA; BiCMOS process; SiGe; amplifier core; automatic level control; center-taped microstrip lines; integrated coupling capacitors; on-chip power detector circuit; output power detection; power amplifier; single-stage push-pull amplifier topology; three-wire serial digital interface; transmission lines; BiCMOS integrated circuits; Circuit topology; Detectors; Gain; Germanium silicon alloys; Level control; Microstrip; Power amplifiers; Power generation; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European

Conference_Location

Montreux

ISSN

1930-8833

Print_ISBN

1-4244-0303-0

Type

conf

DOI

10.1109/ESSCIR.2006.307604

Filename

4099777