Title :
Low-Power CMOS RF front-end for non-coherent IR-UWB receiver
Author :
Gao, Yuan ; Zheng, Yuanjin ; Heng, Chun-Huat
Author_Institution :
Inst. of Microelectron., A*STAR, Singapore
Abstract :
This paper presents a low-power CMOS RF front-end for 3-5 GHz non-coherent impulse-radio ultra-wideband (IR-UWB) receiver. The proposed front-end comprises a variable-gain low noise amplifier (VG-LNA), an active balun and an analog squarer. Current reuse topology has been adopted in both VG-LNA and active balun to reduce the power consumption. The squarer design is based on the quadratic law of MOSFET in saturation and the performance is optimized for 3-5 GHz UWB signal detection using cascode stage and active load. The VG-LNA has a measured maximum voltage gain of 33 dB/12 dB for high/low gain modes with minimum noise figure 3.7 dB/4.2 dB respectively. Measurements show that the proposed RF front-end achieves an input sensitivity of -91 dBm for UWB on-off keying (OOK) input signal at 1 Mbps pulse rate with an energy efficiency of 3.1 nJ/bit.
Keywords :
CMOS integrated circuits; baluns; field effect integrated circuits; low noise amplifiers; microwave integrated circuits; radio receivers; ultra wideband communication; CMOS RF front-end; MOSFET; active balun; analog squarer; bit rate 1 Mbit/s; frequency 3 GHz to 5 GHz; gain 12 dB; gain 33 dB; noise figure 3.7 dB; noise figure 4.2 dB; noncoherent IR-UWB receiver; noncoherent impulse radio ultrawideband receiver; on-off keying input signal; quadratic law; variable-gain low noise amplifier; Active noise reduction; Energy consumption; Impedance matching; Low-noise amplifiers; Pulse measurements; Radio frequency; Radiofrequency amplifiers; Signal design; Topology; Ultra wideband technology;
Conference_Titel :
Solid-State Circuits Conference, 2008. ESSCIRC 2008. 34th European
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-2361-3
Electronic_ISBN :
1930-8833
DOI :
10.1109/ESSCIRC.2008.4681873