A 1.2V receiver front-end for multi-standard wireless applications in 65 nm CMOS LP

Author

Vidojkovic, M. ; Sanduleanu, M.A.T. ; Vidojkovic, V. ; van der Tang, J. ; Baltus, P. ; van Roermund, A.H.M.

Author_Institution

Mixed-signal Microelectron. Group, Tech. Univ. of Eindhoven, Eindhoven

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

414

Lastpage

417

Abstract

A low-power low-voltage wide-band inductor-less multi-standard receiver RF front-end in a digital CMOS 65 nm Low Power (LP) process is described. S11 less than -10 dB is measured in the frequency range from 10 MHz up to 5 GHz. The front-end featuring two gain modes, achieves a voltage gain of 29 dB in the high voltage gain mode, and a voltage gain of 23 dB in the low voltage gain mode. The 3 dB bandwidth of the RF front-end is 2.5 GHz. The measured NF at 1 GHz is 5.5 dB in the high gain mode and 7.7 dB in the low gain mode. The front-end achieves an IIP3 of -13.5 dBm and -7.5 dBm in the high and the low gain mode, respectively. It consumes 13 mA from a 1.2 V supply in both gain modes. The implemented front-end occupies a chip area of 670 um times 860 um.

Keywords

CMOS digital integrated circuits; low-power electronics; radio receivers; current 13 mA; digital CMOS low power process; frequency 10 MHz to 5 GHz; frequency 2.5 GHz; front end featuring two gain modes; gain 23 dB; gain 29 dB; high voltage gain mode; low voltage gain mode; multi standard wireless applications; noise figure 5.5 dB; noise figure 7.7 dB; receiver front end; size 65 nm; voltage 1.2 V; Broadband amplifiers; Impedance matching; Low voltage; Narrowband; Noise cancellation; Noise measurement; Radio frequency; Receivers; Resistors; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2008. ESSCIRC 2008. 34th European

Conference_Location

Edinburgh

ISSN

1930-8833

Print_ISBN

978-1-4244-2361-3

Electronic_ISBN

1930-8833

Type

conf

DOI

10.1109/ESSCIRC.2008.4681880

Filename

4681880