Integrated RF Front-End in 0.13 μm CMOS for Automotive and Industrial Applications beyond 20 GHz

Author

Berry, M. ; Kienmayer, C. ; Thüringer, R. ; Simburger, Werner ; Menzel, W.

Author_Institution

Ulm Univ.

fYear

2006

fDate

19-21 Sept. 2006

Firstpage

392

Lastpage

395

Abstract

An integrated front-end, for automotive and industrial applications beyond 20 GHz, in 0.13μm standard CMOS is presented. The front-end chip includes a low noise amplifier, a transformer-based Gilbert-mixer, an intermediate frequency amplifier and a buffer for the local oscillator input. The differential front-end at 22.5 GHz, measured on test-board, achieves a gain of 25.8 dB, a SSB noise figure of 6.8 dB, an input IP3 of -34.6 dBm and an input 1dB compression point of -41.5 dBm while consuming 112.5 mW at a power supply voltage of 1.5 V.

Keywords

CMOS integrated circuits; integrated circuit design; low noise amplifiers; mixers (circuits); radar receivers; road vehicle radar; 0.13 micron; 1.5 V; 112.5 mW; 22.5 GHz; 25.8 dB; 6.8 dB; CMOS; automotive applications; buffer; industrial applications; integrated RF front-end; intermediate frequency amplifier; low noise amplifier; transformer-based Gilbert-mixer; Automotive engineering; Electrical equipment industry; Gain measurement; Local oscillators; Low-noise amplifiers; Noise measurement; Power measurement; Radio frequency; Radiofrequency amplifiers; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European

Conference_Location

Montreux

ISSN

1930-8833

Print_ISBN

1-4244-0303-0

Type

conf

DOI

10.1109/ESSCIR.2006.307613

Filename

4099786