Title :
A 5-25 GHz high linearity, low-noise CMOS amplifier
Author :
Jacobsson, Harald ; Aspemyr, Lars ; Bao, Mingquan ; Mercha, Abdelkarim ; Carchon, Geert
Author_Institution :
Ericsson AB, Molndal
Abstract :
A very wide-band amplifier has been designed in a 90 nm CMOS process, utilizing a common source topology with shunt resistor-inductor feedback. Both input and output return loss was better than 10 dB from 6 to 23 GHz for a one-stage amplifier and from 5 to 26 GHz for a two-stage version. The gain varied from 6 to 9 dB for the one-stage amplifier and from 12 to 16 dB for the two-stage amplifier over that frequency range. The noise figure is below 7 dB over 5-26 GHz for both amplifiers. At 20 GHz the input IP3 of the one- and two-stage amplifiers were 14 dBm and 6 dBm, respectively
Keywords :
CMOS analogue integrated circuits; integrated circuit design; low noise amplifiers; microwave amplifiers; wideband amplifiers; 12 to 16 dB; 5 to 25 GHz; 5 to 26 GHz; 6 to 23 GHz; 6 to 9 dB; 90 nm; CMOS process; common source topology; low-noise amplifier; one-stage amplifier; shunt resistor-inductor feedback; two-stage amplifiers; very wide band amplifier; Broadband amplifiers; CMOS technology; Feedback amplifiers; Frequency; Impedance; Inductors; Linearity; Low-noise amplifiers; Shunt (electrical); Wideband;
Conference_Titel :
Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0303-0
DOI :
10.1109/ESSCIR.2006.307614
