Title :
A compact charge-based MOSFET model for circuit simulation
Author :
Filho, O. C Gouveia ; Cunha, A.I.A. ; Schneider, M.C. ; Galup-Montoro, C.
Author_Institution :
Dept. of Electr. Eng., Univ. Fed. de Santa Catarina, Florianapolis, Brazil
Abstract :
This paper presents a physically based model for the MOS transistors suitable for design and simulation of integrated circuits. The static and dynamic characteristics of the MOSFET are accurately described by single-piece functions of the inversion charge densities at source and drain. A new compact and physical approach to short-channel effects is presented. We have run some tests to compare the performances of our model and widely used MOSFET models
Keywords :
MOSFET; MOSFET circuits; circuit simulation; inversion layers; sample and hold circuits; surface potential; charge-based MOSFET model; circuit simulation; dynamic characteristics; inversion charge densities; model performances; physically based model; single-piece functions; static characteristics; Analytical models; Circuit simulation; Circuit testing; Electronic mail; Equations; Integrated circuit modeling; MOSFET circuits; Performance evaluation; Surface fitting; Threshold voltage;
Conference_Titel :
Electronics, Circuits and Systems, 1998 IEEE International Conference on
Conference_Location :
Lisboa
Print_ISBN :
0-7803-5008-1
DOI :
10.1109/ICECS.1998.813369
