An 8-bit, 4-Gsample/s Track-and-Hold in a 67GHz fT SiGe BiCMOS technology

Author

Smola, D. ; Huijsing, J.H. ; Makinwa, K.A.A. ; Ploeg, H. V d ; Vertregt, M. ; Breems, L.

Author_Institution

Dept. of Electron. Instrum., Delft Univ. of Technol.

fYear

2006

fDate

Sept. 2006

Firstpage

408

Lastpage

411

Abstract

In this paper we present design and measurements of a high-speed track-and-hold (T&H) circuit. The circuit was implemented in a low-cost 67GHz fT SiGe technology. At 4GS/s the circuit achieves SNR better than 52dB and THD of Â¿50.5dB, corresponding to 8.1 effective bits. This performance is achieved for input frequencies up to 1.1GHz with a differential full-scale input swing of 0.9VPP. The power dissipation of the T&H, including buffers and clock driver, is 590mW. Since measurements at such high frequencies are challenging, a full description of the measurement setup is provided.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; high-speed integrated circuits; integrated circuit design; sample and hold circuits; 0.9 V; 590 mW; 8 bit; BiCMOS technology; SiGe; buffer circuits; clock driver; high-speed track-and-hold circuit design; power dissipation; Bandwidth; BiCMOS integrated circuits; Clocks; Driver circuits; Germanium silicon alloys; Sampling methods; Silicon germanium; Switches; Switching circuits; Tail;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European

Conference_Location

Montreaux, Switzerland

ISSN

1930-8833

Print_ISBN

1-4244-0303-0

Type

conf

DOI

10.1109/ESSCIR.2006.307617

Filename

4099790