A low-power capacitance to pulse width converter for MEMS interfacing

Author

Bruschi, P. ; Nizza, N. ; Dei, M.

Author_Institution

Dipt. di Ing. dell´´Inf., Univ. di Pisa, Pisa

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

446

Lastpage

449

Abstract

A compact converter from capacitance to pulse width, suitable for interfacing integrated capacitive sensors is described. The circuit has been designed and fabricated using 0.32 mum/ 3.3 V CMOS devices from the BCD6s process of STMicroelectroncs and occupies an area of 1025 times 515 mum². Measurements performed on the test chip showed an excellent linearity, a temperature drift of 300 ppm/degC, and power consumption as low as 84 muW for continuous operation.

Keywords

CMOS integrated circuits; analogue-digital conversion; capacitive sensors; detector circuits; microsensors; signal processing; BCD6s process; CMOS devices; MEMS interfacing; STMicroelectroncs; integrated capacitive sensors; low-power capacitance-to-pulse width converter; power 84 muW; size 0.32 mum; size 1025 mum; size 515 mum; voltage 3.3 V; CMOS process; Capacitance; Capacitive sensors; Circuit testing; Integrated circuit measurements; Micromechanical devices; Performance evaluation; Power measurement; Pulse width modulation converters; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2008. ESSCIRC 2008. 34th European

Conference_Location

Edinburgh

ISSN

1930-8833

Print_ISBN

978-1-4244-2361-3

Electronic_ISBN

1930-8833

Type

conf

DOI

10.1109/ESSCIRC.2008.4681888

Filename

4681888