Title :
ZnSe growth by ion laser-assisted metalorganic chemical vapor deposition
Author_Institution :
Dept. of Electron. Eng., Yung-Ta Junior Coll. of Technol. & Commerce, Ping-Tung, Taiwan
Abstract :
In this study, low pressure metal-organic chemical vapour deposition was used, accompanied by 488 nm argon ion laser irradiation, to study the growth of ZnSe epilayers. With laser irradiation, a faster growth rate was obtained and the crystallinity was improved. Better optical properties appeared when the growth temperature was below 400°C. The influence of the laser power density was examined between 0 and 0.2 W/cm2 at a growth temperature of 350°C. The growth rate and quality improved with increasing laser density
Keywords :
II-VI semiconductors; laser materials processing; photoluminescence; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; zinc compounds; 250 to 550 C; 488 nm; ZnSe; ZnSe epilayers; ZnSe growth; crystallinity; growth rate; growth temperature; ion laser irradiation; laser power density; low pressure metal-organic chemical vapour deposition; optical properties; photoluminescence spectra; Chemical lasers; Chemical technology; Photonic crystals; Power lasers; Semiconductor lasers; Surface emitting lasers; Temperature distribution; Temperature sensors; X-ray lasers; Zinc compounds;
Conference_Titel :
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location :
Penang
Print_ISBN :
0-7803-3388-8
DOI :
10.1109/SMELEC.1996.616462
